Senior CMOS Analog/Mixed-Signal Memory Architect

Ferroelectric-Memory-Gmbh-2 is seeking an experienced IC Design Engineer with strong expertise in CMOS analog/mixed‑signal design and emerging NVM devices to help develop our next‑generation ferroelectric memory products based on hafnium oxide technology. You will work with international teams in Milan or Dresden to turn innovative memory concepts into robust silicon. The role requires hands‑on Cadence and Verilog work, a deep understanding of device physics, and the ability to drive design from

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